PART |
Description |
Maker |
2N6796LCC4 |
N-Channel Power MOSFET(Vdss00VId(cont).4A,Rds(on).18ΩN沟道功率型MOS场效应管(Vdss00VId(cont).4A,Rds(on).18Ω
|
SEME-LAB[Seme LAB]
|
IDK-2131WN-K2HDA1E |
31.5 1,200 cd/m2 Ultra High Brightness Industrial Display Kit with LED B/L
|
Advantech Co., Ltd.
|
IRFM150 2N7224 |
N-Channel Power MOSFET(Vdss:100V,Id(cont):34A,Rds(on):0.070惟)(N娌?????MOS?烘?搴??(Vdss:100V,Id(cont):34A,Rds(on):0.070惟)) N-Channel Power MOSFET(Vdss:100V,Id(cont):34A,Rds(on):0.070Ω)(N沟道功率MOS场效应管(Vdss:100V,Id(cont):34A,Rds(on):0.070Ω)) N沟道功率MOSFET(减振钢板基本:100V的,身份证(续)4A条的Rds(on):0.070Ω)(不适用马鞍山沟道功率场效应管(减振钢板基本00V的,身份证(续)4A条的Rds(on.070Ω))
|
SEMELAB LTD Electronic Theatre Controls, Inc. TE Connectivity, Ltd. Semelab(Magnatec) SEME-LAB[Seme LAB]
|
IDK-2108R-K2SVA2E |
8.4 SVGA 1,200 cd/m2 Ultra High Brightness Industrial Display Kit with LED B/L
|
Advantech Co., Ltd.
|
PD-32A025 |
32 Character, 16 Segment Alphanumeric Display with .250"" [6.35mm] High Characters, 80 Foot Lamberts Brightness, Multiplexed Operation
|
Vishay
|
IRFN340SMD |
N-Channel Power MOSFET(BVdss:400V,Id(cont):10A,Rds(on):0.55Ω)(N沟道功率MOS场效应管(BVdss:400V,Id(cont):10A,Rds(on):0.55Ω))
|
SemeLAB SEME-LAB[Seme LAB]
|
2SA1721 E000549 |
From old datasheet system HIGH VOLTAGE CONTROL APPLICATIONS PLASMA DISPLAY TRANSISTOR (HIGH VOLTAGE CONTROL, PLASMA DISPLAY, NIXIE TUBE DRIVER, CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS
|
Toshiba Semiconductor Toshiba Corporation
|
APD-192G096 |
192 x 96 Graphics Display with Drive Electronics, Controller and Serial Interface, Text or Graphics Mode, Very Compact, Wide Viewing Angle, Flicker Free Refresh, Editing Functions, High Brightness
|
Vishay
|
030233FR |
12 WAYS MINI-DIN RIGHT ANGLE DIP TYPE (DUAL PORT)
|
SUYIN USA, INC.
|
APD-480M021-1 |
480 Character Display with Drive Electronics Controller and Serial Interface, ASCII Character Set, 2 Step Brightness Control, Wide Viewing Angle, Rugged Design, Slim Profile, Flicker Free Refresh, Editing Functions
|
Vishay
|
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